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PDF 74HC05 Data sheet ( Hoja de datos )
| Número de pieza | 74HC05 | |
| Descripción | Hex inverter | |
| Fabricantes | NXP Semiconductors | |
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74HC05
Hex inverter with open-drain outputs
Rev. 02 — 18 June 2009
Product data sheet
1. General description
The 74HC05 is a high-speed Si-gate CMOS device that complies with JEDEC standard
no. 7A.
The 74HC05 contains six inverters.The outputs of the 74HC05 are open-drain and can be
connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH
wired-AND functions. The open-drain outputs require pull-up resistors to perform correctly.
2. Features
I Wide operating voltage 2.0 V to 6.0 V
I Input levels:
N For 74HC05: CMOS level
I Latch-up performance exceeds 100 mA per JESD 78 Class II level A
I ESD protection:
N HBM JESD22-A114E exceeds 2000 V
N CDM JESD22-C101C exceeds 1000 V
I Multiple package options
I Specified from −40 °C to +85 °C and from −40 °C to +125 °C
3. Ordering information
Table 1. Ordering information
Type number Package
Temperature range Name
74HC05D
−40 °C to +125 °C SO14
74HC05PW −40 °C to +125 °C TSSOP14
74HC05BQ −40 °C to +125 °C DHVQFN14
Description
Version
plastic small outline package; 14 leads; body width SOT108-1
3.9 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT402-1
plastic dual in-line compatible thermal enhanced very SOT762-1
thin quad flat package; no leads; 14 terminals;
body 2.5 × 3 × 0.85 mm
1 page  
NXP Semiconductors
74HC05
Hex inverter with open-drain outputs
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max Min Max
II input leakage VI = VCC or GND;
current
VCC = 6.0 V
--
0.1 -
1-
1 µA
IOZ OFF-state per input pin; VI = VIL;
- - 0.5 -
output current VO = VCC or GND;
other inputs at VCC or GND;
VCC = 6.0 V; IO = 0 A
5.0 -
10 µA
ICC supply current VI = VCC or GND; IO = 0 A; - - 2.0 -
VCC = 6.0 V
20 -
40 µA
CI input
capacitance
- 3.5 - - - - - pF
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; for test circuit see Figure 7.
Symbol Parameter
Conditions
Min
tPLZ LOW to OFF-state nA to nY; see Figure 6
propagation delay VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
tPZL OFF-state to LOW nA to nY; see Figure 6
propagation delay VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
tTHL HIGH to LOW see Figure 6
output transition
time
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
CPD
power dissipation per inverter; VI = GND to VCC;
[1]
capacitance
VCC = 5.0 V
[1] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(0.5 × CL × VO2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
VO = output voltage in V (output HIGH);
VCC = supply voltage in V;
N = number of inputs switching;
RL = load resistance in MΩ;
CL = load capacitance in pF;
-
-
-
-
-
-
-
-
-
-
25 °C
Typ
20
11
10
22
9
8
18
6
5
4
−40 °C to +125 °C Unit
Max Max
Max
(85 °C) (125 °C)
90 115 135 ns
18 23
27 ns
15 20
23 ns
90 115 135 ns
18 23
27 ns
15 20
23 ns
75 95 110 ns
15 19
22 ns
13 16
19 ns
--
- pF
74HC05_2
Product data sheet
Rev. 02 — 18 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
74HC05
Hex inverter with open-drain outputs
13. Abbreviations
Table 10. Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal-Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
14. Revision history
Table 11. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74HC05_2
20090618
Product data sheet
-
74HC05_1
Modifications:
• Added type numbers 74HC05PW (TSSOP14 package) and 74HC05BQ (DHVQFN14
package)
74HC05_1
20090427
Product data sheet
-
-
74HC05_2
Product data sheet
Rev. 02 — 18 June 2009
© NXP B.V. 2009. All rights reserved.
11 of 13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet 74HC05.PDF ] | |
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