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PDF BD1LB500EFJ-C Data sheet ( Hoja de datos )
| Número de pieza | BD1LB500EFJ-C | |
| Descripción | In-Vehicle 1ch Low Side Switch | |
| Fabricantes | ROHM Semiconductor | |
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Datasheet
1ch Low Side Switch IC
In-Vehicle 1ch Low Side Switch
BD1LB500 Series (BD1LB500EFJ-C BD1LB500FVM-C)
Features
■ Built-in overcurrent limiting circuit
■ Built-in thermal shutdown circuit (TSD)
■ Built-in open load detection circuit (at output OFF)
■ Enables direct control from CMOS logic ICs, etc.
■ Low standby current
■ Built-in under voltage lock out circuit
■ Built-in diagnostic output (ST) terminal
■ Low ON resistance RDS(ON)=350mΩ(Typ) (VDD=IN=5V,
Ta=25°C, IOUT=0.25A)
■ Built-in overvoltage protection(active clamp) for output
circuit
■ Monolithic power IC in which the control unit (CMOS)
and power MOS FET are incorporated into one chip
■ 1ch low side switch for driving mechanical relay coil
■ AEC-Q100 Qualified(1)
(1) Grade1
Overview
BD1LB500 Series is an in-vehicle 1ch low side switch.
This switch builds in the overcurrent limiting circuit,
thermal shutdown circuit, open load detection circuit and
under voltage lock out circuit. It also provides the
diagnostic output circuit when an abnormality is
detected.
Application
■ In-vehicle application (Air conditioners, body devices,
meters, etc.)
Basic Application Circuit (Recommendation)
VDD
Specifications
Operating voltage range
ON resistance (25°C, Typ.)
Overcurrent limitation (Typ.)
Active clamp energy (25°C)
3.5V to 5.5V
350mΩ
1.50A
25mJ
Package
HTSOP-J8
MSOP8
4.90mm x 6.00mm x 1.00mm
2.90mm x 4.00mm x 0.90mm
HTSOP-J8
VBAT
RL
MSOP8
0.1µF
8
VDD
Logic
7
N.C.
6
DRAIN
Under voltage
lock out
Open load
detection
Overvoltage
protection
5
DRAIN
Rext (2)
Over current
Limit
SOURCE
IN
ST
SOURCE (GND)
(GND)
1234
10k (3)
(2) When the open detection function is required, an external resistance must be added between DRAIN terminal and SOURCE terminal.
(3) It is necessary to detect unusual state(ST terminal is low) when VDD terminal is opened.
Product configuration: Silicon monolithic integrated circuit
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○The product is not designed for radiation resistance.
1/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006
1 page  
BD1LB500 Series
Datasheet
Electrical Characteristics (VDD=3.5V to 5.5V, -40°C≤ Tj≤ +150°C unless otherwise is specified)
Rated value
Item Symbol
Unit Condition
Min Typ Max
[Protective circuit]
Overcurrent detection current
IOCP
0.8
1.5
2.5
A VIN=5V
Diagnostic output delay time
tDHL
tDLH
－
－
40 80 μs VDD=5V,RL=4Ω to ∞
320 640 μs VDD=5V,RL=∞ to 4Ω
Open load detection threshold
voltage (1)
VOPEN
1
2
3 V IN=0V
Open load detection time
tOPEN
100
300
900 μs IN=0V
(1) To enable detection, an external resistance must be added between DRAIN terminal and SOURCE terminal.
（Determine Rext depending on RL.）
Definition
Figure 1. Definition
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006
5 Page 
BD1LB500 Series
Protective Function Timing Charts
Input voltage
Chip temperature
Output current
Error flag
Figure 18. Overheat Protection Timing Chart
Datasheet
Input Voltage
IN
Output Voltage
VOUT
Output current
Io
Error flag
ST
tOFF
1ms(typ)
40µs(typ)
100µs(typ)
Input
voltage VIN
Output
voltage VOUT
Error flag VST
t
VOUT ≤ 2.0V(Typ)
(VOPEN)
t
300μs(Typ)
(TOPEN)
t
Figure 19. Overcurrent Protection Timing Chart
Figure 20. Open Detection Protection Timing Chart
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BD1LB500EFJ-C.PDF ] | |
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