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Numéro de référence | 1ZB100 | ||
Description | SILICON DIFFUSED TYPE ZENER DIODE | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
1ZB6.8~1ZB390
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
1ZB6.8~1ZB390
CONSTANT VOLTAGE REGULATION
TRANSIENT SUPPRESSORS
Unit: mm
l Average Power Dissipation
l Peak Reverse Power Dissipation
l Zener Voltage
l Tolerance of Zener Voltage
l Plastic Mold Package
: P = 1.0W
: PRSM = 200W at tw = 200µs
: VZ = 6.8~390V
: ±10%
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
Tj
Tstg
RATING
1.0
−40~150
−40~150
UNIT
W
°C
°C
MARK
JEDEC
JEITA
TOSHIBA
Weight: 0.18g
―
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3−3F2A
1 2001-07-09
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Pages | Pages 5 | ||
Télécharger | [ 1ZB100 ] |
No | Description détaillée | Fabricant |
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