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Panasonic Semiconductor - PNP Transistor - 2SB642

Numéro de référence B642
Description PNP Transistor - 2SB642
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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B642 fiche technique
Transistor
2SB642
Silicon PNP epitaxial planer type
For low-power general amplification
s Features
q High foward current transfer ratio hFE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–50
–7
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Cob
VCB = –20V, IE = 0
–1 nA
VCE = –20V, IB = 0
–1 µA
IC = –10µA, IE = 0
–60
V
IC = –2mA, IB = 0
–50
V
IE = –10µA, IC = 0
–7
V
VCE = –10V, IC = –2mA
160 460
IC = –100mA, IB = –10mA
–1 V
VCB = –10V, IE = 2mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz
3.5 pF
*hFE Rank classification
Rank
Q
hFE 160 ~ 260
R
210 ~ 340
S
290 ~ 460
1

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