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PDF S9012 Data sheet ( Hoja de datos )
| Número de pieza | S9012 | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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1. S9012 transistor datasheet  Hay una vista previa y un enlace de descarga de S9012 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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Elektronische Bauelemente
S9012
PNP Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Collector
33
Power dissipation
PCM : 0.3 W
Collector Current
ICM : - 0.5 A
Collector-base voltage
V(BR)CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : - 55OC ~ + 150OC
V
1
2
A
L
3
Top View
12
G
1
Base
BS
2
Emitter
C
D
HK
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS ( Tamp.=25OC unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
Ic= -100 A IE=0
Ic= -1mA IB=0
-40
-25
V
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
V(BR)EBO
ICBO
ICEO
IE= -100 A IC=0
VCB= - 40V , IE=0
VCE= - 20V , IB=0
-5
V
-0.1 A
-0.1 A
Emitter cut-off current
IEBO VEB= - 5V , IC=0
- 0.1 A
DC current gain
HFE(1)
HFE(2)
VCE= -1V , IC=- 50 mA
VCE= -1V , IC= -500mA
120
40
400
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=- 50mA
-0.6 V
Base-emitter saturation voltage
VBE(sat)
IC=- 500mA, IB=- 50m A
-1.2 V
Transition frequency
VCE= -6V, IC= - 20mA
fT
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
J
300-400
DEVICE MARKING
http://www.SeCoSGmbH.com
17-Dec-2007 Rev.B
S9012 =2T1
Any changing of specification will not be informed individual
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1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet S9012.PDF ] | |
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