|
|
Número de pieza | STP13N60M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP13N60M2 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
No Preview Available ! STP13N60M2, STU13N60M2,
STW13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220, IPAK and TO-247 packages
Datasheet − production data
TAB
3
2
1
TO-220
TAB
IPAK
3
2
1
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax RDS(on) max ID
STP13N60M2
STU13N60M2
650 V
0.38 Ω
11 A
STW13N60M2
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STP13N60M2
STU13N60M2
STW13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220
IPAK
TO-247
February 2014
This is information on a product in full production.
DocID023937 Rev 5
Packaging
Tube
1/18
www.st.com
18
1 page STP13N60M2, STU13N60M2, STW13N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 11 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11 A, di/dt = 100 A/μs
VDD = 60 V, Tj=150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
- 11 A
- 44 A
- 1.6 V
- 297
ns
- 2.8
μC
- 18.5
A
- 394
ns
- 3.8
μC
- 19
A
DocID023937 Rev 5
5/18
5 Page STP13N60M2, STU13N60M2, STW13N60M2
Package mechanical data
Figure 22. TO-220 type A drawing
DocID023937 Rev 5
BW\SH$B5HYB7
11/18
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet STP13N60M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP13N60M2 | N-channel Power MOSFET | STMicroelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |