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Numéro de référence | BLM9435A | ||
Description | P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | BELLING | ||
Logo | |||
Pb Free Product
BLM9435A
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM9435A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -5.3A
RDS(ON) < 100mΩ @ VGS=-4.5V
RDS(ON) < 52mΩ @ VGS=-10V
D
G
S
Schematic diagram
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
9435A
BLM9435A
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-5.3
-20
2.6
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250µA
Zero Gate Voltage Drain Current
IDSS VDS=-24V,VGS=0V
49 ℃/W
Min Typ Max Unit
-30 -33
--
-
-1
V
µA
Page1
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Pages | Pages 6 | ||
Télécharger | [ BLM9435A ] |
No | Description détaillée | Fabricant |
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