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BLV6N60 fiches techniques PDF

BELLING - N-Channel Enhancement Mode Power MOSFET

Numéro de référence BLV6N60
Description N-Channel Enhancement Mode Power MOSFET
Fabricant BELLING 
Logo BELLING 





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BLV6N60 fiche technique
BLV6N60
N-channel Enhancement Mode Power MOSFET
Avalanche Energy Specified
Fast Switching
Simple Drive Requirements
BVDSS
RDS(ON)
ID
600V
1.2Ω
6A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
PD
EAS
IAR
EAR
Tj
TSDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value
600
+ 20
6
3.8
24
125
1
490
6
12.5
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to case Max.
Thermal Resistance, Junction to Ambient Max.
Value
1
62.5
http://www.belling.com.cn
-1-
Total 6 Pages
Units
V
V
A
A
A
W
W/
mJ
A
mJ
oC
oC
Units
/ W
/ W
3/28/2007

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