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PDF 2DB1119S Data sheet ( Hoja de datos )
| Número de pieza | 2DB1119S | |
| Descripción | PNP SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes | |
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2DB1119S
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
SOT89-3L
3E
COLLECTOR
2,4
C4 2 C
1
BASE
1B
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
ICM
IC
Symbol
PD
RθJA
Tj, TSTG
Value
-25
-25
-5
-2
-1
Value
1
125
-55 to +150
Unit
V
V
V
A
A
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE
Min
-25
-25
-5
⎯
⎯
⎯
⎯
140
40
fT ⎯
Cob ⎯
Typ
⎯
⎯
⎯
⎯
⎯
-0.15
-0.85
⎯
⎯
200
12
Max
⎯
⎯
⎯
-0.1
-0.1
-0.7
-1.2
280
⎯
⎯
⎯
Unit
V
V
V
μA
μA
V
V
⎯
⎯
MHz
pF
Conditions
IC = -10μA, IE = 0
IC = -1mA, IB = 0
IE = -10μA, IC = 0
VCB = -20V, IE = 0
VEB = -4V, IC = 0
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
VCE = -2V, IC = -50mA
VCE = -2V, IC = -1A
VCE = -10V, IC = -50mA
f = 100MHz
VCB = -10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31298 Rev. 2 - 2
1 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2DB1119S.PDF ] | |
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