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PDF 2DD2150R Data sheet ( Hoja de datos )
| Número de pieza | 2DD2150R | |
| Descripción | NPN SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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PART OBSOLETE - USE FCX619
2DD2150R
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.055 grams (approximate)
Top View
COLLECTOR
2,4
1
BASE
3
EMITTER
Device Schematic
3E
C4
2C
1B
TOP VIEW
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
40
20
6
5
3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Symbol Min Typ Max
V(BR)CBO
40
⎯
⎯
V(BR)CEO
20
⎯
⎯
V(BR)EBO
6
⎯⎯
ICBO
⎯
⎯ 0.1
IEBO
⎯
⎯ 0.1
VCE(SAT)
⎯
0.2 0.5
hFE 180 ⎯ 390
fT ⎯ 160 ⎯
Cob ⎯ 28 ⎯
Unit
V
V
V
μA
μA
V
⎯
MHz
pF
Conditions
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 30V, IE = 0
VEB = 5V, IC = 0
IC = 2A, IB = 0.1A
IC = 100mA, VCE = 2V
VCE = 2V, IE = -0.1A
f = 100MHz
VCB = 10V, IE = 0,
f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
2DD2150R
Document number: DS31148 Rev. 4 - 6
1 of 4
www.diodes.com
December 2011
© Diodes Incorporated
1 page | ||
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| PDF Descargar | [ Datasheet 2DD2150R.PDF ] | |
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