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2DD2656 fiches techniques PDF

Diodes - NPN SURFACE MOUNT TRANSISTOR

Numéro de référence 2DD2656
Description NPN SURFACE MOUNT TRANSISTOR
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2DD2656 fiche technique
Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary PNP Type Available (2DB1694)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
2DD2656
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
BE
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
30
30
6
1
2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
Min
30
30
6
270
Output Capacitance
Cobo
Typ
100
5
Max
0.1
0.1
350
680
Unit
V
V
V
μA
μA
mV
pF
Current Gain-Bandwidth Product
fT
270
MHz
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
Conditions
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 15V, IE = 0
VEB = 6V, IC = 0
IC = 500mA, IB = 25mA
VCE = 2V, IC = 100mA
VCB = 10V, IE = 0,
f = 1MHz
VCE = 2V, IC = 100mA,
f = 100MHz
2DD2656
Document number: DS31638 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated

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