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Numéro de référence | G4PC50F | ||
Description | IRG4PC50F | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD 91468C
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50F
Fast Speed IGBT
Features
• Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AC
Max.
600
70
39
280
280
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
12/30/00
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Pages | Pages 8 | ||
Télécharger | [ G4PC50F ] |
No | Description détaillée | Fabricant |
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