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BFL4036 fiches techniques PDF

ON Semiconductor - N-Channel Power MOSFET / Transistor

Numéro de référence BFL4036
Description N-Channel Power MOSFET / Transistor
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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BFL4036 fiche technique
Ordering number : ENA1830A
BFL4036
N-Channel Power MOSFET
500V, 14A, 0.52Ω, TO-220F-3FS
http://onsemi.com
Features
ON-resistance RDS(on)=0.4Ω (typ.)
10V drive
Input capacitance Ciss=1000pF (typ.)
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
IDc*1
IDpack*2
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
EAS
IAV
Note :*1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
PW10μs, duty cycle1%
Tc=25°C (Our ideal heat dissipation condition)*3
500
±30
14
9.6
50
2.0
37
150
--55 to +150
109
14
V
V
A
A
A
W
W
°C
°C
mJ
A
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=1mH, IAV=14A (Fig.1)
*5 L1mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
4.7
2.54 BFL4036-1E
Ordering & Package Information
Device
Package
Shipping
BFL4036-1E
TO-220F-3FS
SC-67
50
pcs./tube
memo
Pb-Free
Marking
Electrical Connection
2
1.47 MAX
0.8
123
2.54 2.54
2.76
0.5 1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
Semiconductor Components Industries, LLC, 2013
June, 2013
FL4036
LOT No.
1
3
61213 TKIM TC-00002924/90810QB TK IM TC-00002470 No. A1830-1/6

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