DataSheetWiki


FQD13N06TM fiches techniques PDF

Fairchild Semiconductor - 60V N-Channel MOSFET

Numéro de référence FQD13N06TM
Description 60V N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FQD13N06TM fiche technique
FQD13N06
N-Channel QFET® MOSFET
60 V, 10 A, 140 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
10 A, 60 V, RDS(on) = 140 m(Max.) @ VGS = 10 V,
ID = 5.0 A
• Low Gate Charge (Typ. 5.8 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
D
G
S
D
D-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD13N06TM
60
10
6.3
40
± 25
85
10
2.8
7.0
2.5
28
0.22
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD13N06TM
4.5
110
50
Unit
oC/W
©2000 Fairchild Semiconductor Corporation
FQD13N06 Rev. C1
1
www.fairchildsemi.com

PagesPages 8
Télécharger [ FQD13N06TM ]


Fiche technique recommandé

No Description détaillée Fabricant
FQD13N06TM 60V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche