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FDD1600N10ALZD fiches techniques PDF

Fairchild Semiconductor - N-Channel PowerTrench MOSFET + Diode

Numéro de référence FDD1600N10ALZD
Description N-Channel PowerTrench MOSFET + Diode
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD1600N10ALZD fiche technique
November 2013
FDD1600N10ALZD
BoostPak (N-Channel PowerTrench® MOSFET + Diode)
100 V, 6.8 A, 160 mΩ
Features
• RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
• RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A
• Low Gate Charge (Typ. 2.78 nC)
• Low Crss (Typ. 2.04 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop
and excellent switching performance.
Applications
• LED Monitor Backlight
• LED TV Backlight
• LED Lighting
• Consumer Appliances,
DC-DC converter (Step up & Step down)
3
12
45
3
TO252-5L
1. Gate
2. Source
3. Drain / Anode
4. Cathode
5. Cathode
1
Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
IF
IFM
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Diode Continuous Forward Current (TC = 124oC)
Diode Maximum Forward Current
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case for MOSFET, Max.
Thermal Resistance, Junction to Case for Diode, Max.
Thermal Resistance, Junction to Ambient, Max.
4,5
2
FDD1600N10ALZD
100
±20
6.8
4.3
13.6
5.08
6.0
14.9
0.12
4
40
-55 to +150
300
FDD1600N10ALZD
8.4
3.3
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
A
A
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FDD1600N10ALZD Rev. C2
1
www.fairchildsemi.com

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