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PDF UPA3753GR Data sheet ( Hoja de datos )
| Número de pieza | UPA3753GR | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
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μPA3753GR
MOS FIELD EFFECT TRANSISTOR
Data Sheet
R07DS0758EJ0100
Rev.1.00
May 25, 2012
Description
The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
Features
• Dual chip type
• Low on-state resistance
⎯ RDS(on) = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
⎯ RDS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A)
• Low gate charge
⎯ QG = 13.4 nC TYP. (VGS = 10 V)
• Small and surface mount package (Power SOP8)
Ordering Information
Part No.
μPA3753GR-E1-AT *1
μPA3753GR-E2-AT *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Package
Power SOP8
0.08 g TYP.
Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.)
“-E1”,”-E2” indicates the unit orientation.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) *1
Total Power Dissipation (1unit) *2
Total Power Dissipation (2units) *2
Channel Temperature
Storage Temperature
Single Avalanche Current *3
Single Avalanche Energy *3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
TSTG
IAS
EAS
Ratings
60
±20
±5.0
±20
0.85
1.12
150
−55 to +150
5.0
2.5
Notes: *1. PW ≤ 10 μs, Duty Cycle ≤ 1%
*2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Unit
V
V
A
A
W
W
°C
°C
A
mJ
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Page 1 of 6
1 page  
μPA3753GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
80
VGS = 4.5 V
ID = 2.5 A
60
40 VGS = 10 V
ID = 2.5 A
20
Pulsed
0
-50 0 50 100 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
10
1
0.1
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1
td(on)
tf
tr
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 10 V
10
1 4.5 V
0.1 0 V
0.01
0.001
0
Pulsed
0.4 0.8 1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100 Coss
VGS = 0 V
f = 1.0 MHz
10
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
VDD = 48 V
30 V
40 12 V
10
8
6
20 4
ID = 5 A
2
00
0 2 4 6 8 10 12 14 16
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs
DIODE FORWARD CURRENT
100
10
1
0.1
0.1
VGS = 0 V
di/dt = 100 A/μ s
1 10 100
IF - Diode Forward Current - A
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA3753GR.PDF ] | |
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