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What is FDD850N10LD?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel PowerTrench MOSFET + Diode".


FDD850N10LD Datasheet PDF - Fairchild Semiconductor

Part Number FDD850N10LD
Description N-Channel PowerTrench MOSFET + Diode
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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November 2013
FDD850N10LD
BoostPak (N-Channel PowerTrench® MOSFET + Diode)
100 V, 15.3 A, 75 mΩ
Features
• RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A
• RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A
• Low Gate Charge (Typ. 22.2 nC)
• Low Crss (Typ. 42 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop
and excellent switching performance.
Applications
• LED Monitor Backlight
• LED TV Backlight
• LED Lighting
• Consumer Appliances,
DC-DC converter (Step up & Step down)
3
12
45
3
TO252-5L
1. Gate
2. Source
3. Drain / Anode
4. Cathode
5. Cathode
1
Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
IF(AV)
IFSM
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
Diode Average Rectified Forward Current (TC = 138oC)
Diode Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case for MOSFET, Max.
Thermal Resistance, Junction to Case for Diode, Max.
Thermal Resistance, Junction to Ambient, Max.
4,5
2
FDD850N10LD
100
±20
15.3
9.7
46
41
6.0
42
0.33
5
50
-55 to +150
300
FDD850N10LD
3.0
2.5
87
Unit
V
V
A
A
mJ
V/ns
W
W/oC
A
A
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FDD850N10LD Rev. C2
1
www.fairchildsemi.com

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FDD850N10LD equivalent
Typical Performance Characteristics - MOSFET (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 250μA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 9. Maximum Safe Operating Area
100
10 100μs
1
0.1
0.01
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
1ms
10ms
100ms
DC
1 10
VDS, Drain-Source Voltage [V]
100 200
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10 V
2. ID = 12 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
18
15
12
VGS = 10V
9
VGS = 5V
6
3
RθJC = 3.0oC/W
0
25 50 75 100 125
TC, Case Temperature [oC]
150
©2013 Fairchild Semiconductor Corporation
FDD850N10LD Rev. C2
5
www.fairchildsemi.com


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FDD850N10LD electronic component.


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