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PDF LMBTA56WT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBTA56WT1G | |
| Descripción | Driver Transistors | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LMBTA55WT1G
LMBTA56WT1G
S-LMBTA55WT1G
S-LMBTA56WT1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
LMBTA55 LMBTA56
–60 –80
–60 –80
–4.0
–500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max Unit
150 mW
1.2 mW/°C
833 °C/W
200 mW
1.6
625
–55 to +150
mW/°C
°C/W
°C
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
(S-)LMBTA55WT1G = 2H; (S-)LMBTA56 WT1G = 2GM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B= 0 )
LMBTA55
LMBTA56
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0 )
Collector Cutoff Current
( V CE = –60Vdc, I B = 0)
Collector Cutoff Current
( V CB = –60Vdc, I E= 0)
LMBTA55
( V CB = –80Vdc, I E= 0)
LMBTA56
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
V (BR)CEO
V (BR)EBO
I CES
I CBO
Min
–60
–80
–4.0
—
—
—
Max Unit
—
—
—
–0.1
–0.1
–0.1
Vdc
Vdc
µAdc
µAdc
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LMBTA56WT1G.PDF ] | |
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