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LBC817-16WT3G fiches techniques PDF

Leshan Radio Company - General Purpose Transistors

Numéro de référence LBC817-16WT3G
Description General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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LBC817-16WT3G fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC817-16WT1G
S-LBC817-16 W T1G
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
Collector Current — Continuous I C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
Unit
mW
R θJA
PD
1.2 mW/°C
833 °C/W
200 mW
R θJA
T J , Tstg
1.6
625
–55to+150
mW/°C
°C/W
°C
DEVICE MARKING
LBC817–16W T1G = 6A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = 10 µA)
Emitter–Base Breakdown Voltage
(I E = 1.0 µA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CBO
45
50
5.0
Typ
3
1
2
SC-70
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
—V
—V
—V
100 nA
5.0 µA
Rev.O 1/3

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