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PDF LMBT918LT1G Data sheet ( Hoja de datos )
| Número de pieza | LMBT918LT1G | |
| Descripción | VHF / UFH Transistor | |
| Fabricantes | Leshan Radio Company | |
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VHF / UFH Transistor
NPN Silicon
LESHAN RADIO COMPANY, LTD.
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
LMBT918LT1G
S-LMBT918LT1G
Device
LMBT918LT1G
S-LMBT918LT1G
LMBT918LT3G
S-LMBT918LT3G
Marking
M3B
M3B
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
IC
Value
15
30
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max Unit
PD 225 mW
RθJA
PD
RθJA
TJ , Tstg
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT9181LT1G = M3B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 3.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = 1.0 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 15 Vdc, I E = 0)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
15
30
3.0
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet LMBT918LT1G.PDF ] | |
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