DataSheet.es    


PDF LMBT6427LT3G Data sheet ( Hoja de datos )

Número de pieza LMBT6427LT3G
Descripción Darlington Transistors
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



Hay una vista previa y un enlace de descarga de LMBT6427LT3G (archivo pdf) en la parte inferior de esta página.


Total 6 Páginas

No Preview Available ! LMBT6427LT3G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
Darlington Transistors
NPN Silicon
z W. e declare that the material of product
compliance with RoHS requirements.
z .S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Ordering Information
Device
LMBT6427LT1G
S-LMBT6427LT1G
LMBT6427LT3G
S-LMBT6427LT3G
MAXIMUM RATINGS
Marking
1V
1V
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT6427LT1G
S-LMBT6427LT1G
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Value
40
40
12
500
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
(S-)LMBT6427LT1G = 1V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 10 mAdc, V BE = 0)
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CE = 25Vdc, I B = 0)
Collector Cutoff Current
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current
( V EB = 10Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CES
I CBO
I EBO
40
40
12
1.0
50
50
1
BASE
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
nAdc
3
COLLECTOR
2
EMITTER
Rev.O 1/6

1 page




LMBT6427LT3G pdf
LESHAN RADIO COMPANY, LTD.
LMBT6427LT1G , S-LMBT6427LT1G
1.0
0.7 D = 0.5
0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
0.01
0.1
0.2
0.5
SINGLE PULSE
SINGLE PULSE
1.0 2.0
5.0
Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z θJC(t)
Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t)
10 20
50 100 200
t, TIME (ms)
Figure 12. Thermal Response
500 1.0k 2.0k
5.0k 10k
FIGURE A
tP
PP
PP
t1
1/f
t1
DUTY CYCLE =t 1 f = t P
PEAK PULSE POWER = P P
Design Note: Use of Transient Thermal Resistance Data
Rev.O 5/6

5 Page










PáginasTotal 6 Páginas
PDF Descargar[ Datasheet LMBT6427LT3G.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
LMBT6427LT3GDarlington TransistorsLeshan Radio Company
Leshan Radio Company

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar