FQD12N20LTM_F085 Datasheet PDF - Fairchild Semiconductor
| Part Number | FQD12N20LTM_F085 | |
| Description | 200V Logic Level N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FQD12N20LTM_F085 download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
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June 2010
FQD12N20LTM_F085
200V Logic Level N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
• 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
• Low gate charge ( typical 16 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
• Qualified to AEC Q101
• RoHS Compliant
D
GS
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
IAR
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Avalanche Current
(Note 1)
(Note 1)
dv/dt
PD
TJ, TSTG
TL
Peak Diode Recovery dv/dt
(Note 2)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
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FQD12N20LTM_F085
200
9.0
5.7
36
± 20
9.0
5.5
2.5
55
0.44
-55 to +150
300
Units
V
A
A
A
V
A
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FQD12N20LTM_F085 Rev. B
1
Typ Max Units
-- 2.27 °C/W
-- 50 °C/W
-- 110 °C/W
www.fairchildsemi.com
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Typical Characteristics
20
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
10 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
STARTING TJ = 125oC
1
0.001
0.01 0.1
1
tAV, TIME IN AVALANCHE (ms)
Figure12. UnclampedInductive
Switching Capability
10
FQD12N20LTM_F085 Rev. B 5 www.fairchildsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQD12N20LTM_F085 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQD12N20LTM_F085.PDF Datasheet ] | |
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