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Leshan Radio Company - General Purpose Transistors

Numéro de référence L8050QLT3G
Description General Purpose Transistors
Fabricant Leshan Radio Company 
Logo Leshan Radio Company 





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L8050QLT3G fiche technique
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
IC = 0.8A.
ƽEpitaxial planar type.
ƽNPN complement: L8050
ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050PLT1G
S-L8050PLT1G
80P
3000/Tape&Reel
L8050PLT3G
S-L8050PLT3G
80P
10000/Tape&Reel
L8050QLT1G
S- L8050QLT1G
1YC
3000/Tape&Reel
L8050QLT3G
S-L8050QLT3G
1YC
10000/Tape&Reel
L8050RLT1G
S-L8050RLT1G
1YE
3000/Tape&Reel
L8050RLT3G
S-L8050RLT3G
1YE
10000/Tape&Reel
L8050SLT1G
L8050SLT3G
S-L8050SLT1G
S-L8050SLT3G
80S
80S
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
800
Unit
V
V
V
mAdc
Symbol
PD
R θJ A
PD
R θJ A
T j,T St g
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
-55 to +150
°C/W
°C
L8050PLT1G
Series
S-L8050PLT1G
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4

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