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Numéro de référence | LMBT5551DW1T3G | ||
Description | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | ||
Fabricant | Leshan Radio Company | ||
Logo | |||
LESHAN RADIO COMPANY, LTD.
DUAL NPN SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
FEATURE
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT5551DW1T1G
S-LMBT5551DW1T1G
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5551DW1T1G
S-LMBT5551DW1T1G
LMBT5551DW1T3G
S-LMBT5551DW1T3G
MAXIMUM RATINGS
G1
G1
3000/Tape&Reel
10000/Tape&Reel
Rating
Symbol
Value
Collector–Emitter Voltage
V CEO
140
Collector–Base Voltage
V CBO
160
Emitter–Base Voltage
V EBO
6.0
Unit
Vdc
Vdc
Vdc
6
5
4
1
2
3
SOT-363/SC-88
C2 B1 E1
Collector Current — Continuous I C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
600 mAdc
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
E2 B2 C1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO 160 — Vdc
Collector–Base Breakdown Voltage
(I C = 100 µAdc, I E = 0)
V(BR)CBO 180 — Vdc
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current
( V CB = 120Vdc, I E = 0)
V(BR)EBO 6.0 — Vdc
I CBO
— 50 nAdc
( V CB = 120Vdc, I E = 0, T A=100 °C)
— 50 µAdc
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
I EBO
— 50 nAdc
Rev.O 1/5
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Pages | Pages 5 | ||
Télécharger | [ LMBT5551DW1T3G ] |
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