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Renesas - MOS FIELD EFFECT TRANSISTOR

Numéro de référence NP34N055SLE
Description MOS FIELD EFFECT TRANSISTOR
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NP34N055SLE fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HLE, NP34N055ILE, NP34N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP34N055HLE
TO-251 (JEITA) / MP-3
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 18 mMAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 22 mMAX. (VGS = 5 V, ID = 17 A)
Low Ciss : Ciss = 2000 pF TYP.
Built-in gate protection diode
NP34N055ILE Note
NP34N055SLE
Note Not for new design.
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
ID(DC)
ID(pulse)
PT
±34
±136
1.2
A
A
W
(TO-252)
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 88 W
IAS 34 / 27 / 10 A
EAS 11 / 72 / 100 mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg –55 to + 175 °C
Notes 1. PW 10 µ s, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.70 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14154EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005

PagesPages 6
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