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Número de pieza | F20NM60D | |
Descripción | STF20NM60D | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de F20NM60D (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! STF20NM60D - STP20NM60FD
STW20NM60FD
N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type
STF20NM60D
STP20NM60FD
STW20NM60FD
VDSS
600V
600V
600V
RDS(on)
<0.29Ω
<0.29Ω
<0.29Ω
ID Pw
20A 192W
20A 45W
20A 214W
■ High dv/dt and avalanche capabilities
■ 100% Avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancE
■ Tight process control and high manufacturing
yields
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
■ Switching application
TO-247
3
2
1
TO-220FP
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STF20NM60D
STP20NM60FD
STW20NM60FD
Marking
F20NM60D
P20NM60FD
W20NM60FD
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
Tube
Tube
August 2006
Rev 4
1/15
www.st.com
15
1 page STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 300V, ID = 10A
RG = 4.7Ω VGS = 10V
(see Figure 16)
VDD = 480 V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see Figure 16)
25 ns
12 ns
8 ns
22 ns
30 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 25°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 150°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
240
1800
16
396
2960
20
20
80
1.5
A
A
V
ns
nC
A
ns
nC
A
5/15
5 Page STF20NM60D - STP20NM60FD - STW20NM60FD
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet F20NM60D.PDF ] |
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F20NM60D | STF20NM60D | STMicroelectronics |
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