DataSheet.es    


PDF F20NM60D Data sheet ( Hoja de datos )

Número de pieza F20NM60D
Descripción STF20NM60D
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



Hay una vista previa y un enlace de descarga de F20NM60D (archivo pdf) en la parte inferior de esta página.


Total 15 Páginas

No Preview Available ! F20NM60D Hoja de datos, Descripción, Manual

STF20NM60D - STP20NM60FD
STW20NM60FD
N-channel 600V - 0.26- 20A - TO-220 - TO-220FP - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type
STF20NM60D
STP20NM60FD
STW20NM60FD
VDSS
600V
600V
600V
RDS(on)
<0.29
<0.29
<0.29
ID Pw
20A 192W
20A 45W
20A 214W
High dv/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistancE
Tight process control and high manufacturing
yields
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
Switching application
TO-247
3
2
1
TO-220FP
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STF20NM60D
STP20NM60FD
STW20NM60FD
Marking
F20NM60D
P20NM60FD
W20NM60FD
Package
TO-220FP
TO-220
TO-247
Packaging
Tube
Tube
Tube
August 2006
Rev 4
1/15
www.st.com
15

1 page




F20NM60D pdf
STF20NM60D - STP20NM60FD - STW20NM60FD
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 300V, ID = 10A
RG = 4.7VGS = 10V
(see Figure 16)
VDD = 480 V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see Figure 16)
25 ns
12 ns
8 ns
22 ns
30 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 25°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, Tj = 150°C
di/dt =100A/µs,VDD=60V
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
240
1800
16
396
2960
20
20
80
1.5
A
A
V
ns
nC
A
ns
nC
A
5/15

5 Page





F20NM60D arduino
STF20NM60D - STP20NM60FD - STW20NM60FD
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/15

11 Page







PáginasTotal 15 Páginas
PDF Descargar[ Datasheet F20NM60D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
F20NM60DSTF20NM60DSTMicroelectronics
STMicroelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar