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PDF NVD4804N Data sheet ( Hoja de datos )
| Número de pieza | NVD4804N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTD4804N, NVD4804N
Power MOSFET
30 V, 117 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• AEC Q101 Qualified − NVD4804N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA) (Note 1)
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
Current (RqJA) (Note 2)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
VDSS
VGS
ID
PD
ID
PD
ID
30
"20
19.6
15.2
2.66
14.5
11
1.43
124
96
V
V
A
W
A
W
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
107
230
45
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
78 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 30 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS 450 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
D
ID MAX
117 A
N−Channel
G
S
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1
2
3
CASE 369AD CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
4 Drain
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source 1 2 3
Gate Drain Source
A = Assembly Location
Y = Year
WW = Work Week
4804N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 9
1
Publication Order Number:
NTD4804N/D
1 page  
NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
6000
5000
Ciss
TJ = 25°C
4000
3000
2000 Crss
Ciss
1000
Coss
0 VDS = 0 V VGS = 0 V
Crss
15 10 5 0 5 10 15 20 25 30
VGS
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
VDD = 15 V
ID = 30 A
VGS = 11.5 V
100 tr
td(off)
tf
td(on)
10
1
1
1000
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
10 ms
100
100 ms
10
1
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 ms
10 ms
dc
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
5
4 Q1
3
QT
Q2
2
1
ID = 30 A
TJ = 25°C
0
0 5 10 15 20 25 30
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
VGS = 0 V
25 TJ = 25°C
20
15
10
5
0
0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
500
ID = 30 A
400
300
200
100
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NVD4804N.PDF ] | |
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