DataSheetWiki


NVB5426N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NVB5426N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





1 Page

No Preview Available !





NVB5426N fiche technique
NTB5426N, NTP5426N,
NVB5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D2PAK, TO-220
Features
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC Q101 Qualified NVB5426N
These Devices are PbFree and are RoHS Compliant
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
GatetoSource Voltage Nonrepetitive
(TP < 10 ms)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC (Note 1)
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
$20
30
120
85
215
260
55 to
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 70 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
IS 60
EAS 735
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain)
Steady State (Note 1)
RqJC
0.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 1
1
http://onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
6.0 mW @ 10 V
ID MAX
(Note 1)
120 A
NChannel
D
G
S
4
4
12
3
12
3
TO220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
5426N
AYWW
1
Gate
5426N
AYWW
31
Source Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= PbFree Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
NTB5426N/D

PagesPages 7
Télécharger [ NVB5426N ]


Fiche technique recommandé

No Description détaillée Fabricant
NVB5426N Power MOSFET ( Transistor ) ON Semiconductor
ON Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche