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FSB660A fiches techniques PDF

Fairchild Semiconductor - PNP Low Saturation Transistor

Numéro de référence FSB660A
Description PNP Low Saturation Transistor
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FSB660A fiche technique
FSB660 / FSB660A
C
E
B
SuperSOTTM-3 (SOT-23)
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
FSB660/FSB660A
VCEO
Collector-Emitter Voltage
60
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
60
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
FSB660/FSB660A
500
250
Units
mW
°C/W
© 2000 Fairchild Semiconductor International
FSB660/FSB660A Rev. B

PagesPages 7
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