|
|
PDF NVD5867NL Data sheet ( Hoja de datos )
| Número de pieza | NVD5867NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NVD5867NL (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NVD5867NL
Power MOSFET
60 V, 22 A, 39 mW, Single N−Channel
Features
• Low RDS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain Cur-
rent RqJA (Notes 1, 2 &
3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
Current Limited by
Package (Note 3)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady TA = 100°C
State TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
IDM
IDmaxpkg
60
"20
22
16
43
21
6.0
4.0
3.3
1.7
85
30
V
V
A
W
A
W
A
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C
175
Source Current (Body Diode)
IS 36 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 19 A, L = 0.1 mH, RG = 25 W)
EAS 18 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
RqJC
3.5 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
45
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on)
39 mW @ 10 V
50 mW @ 4.5 V
D
ID
22 A
G
S
N−CHANNEL MOSFET
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
2
1 Drain 3
Gate Source
Y = Year
WW = Work Week
V5867L = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1
Publication Order Number:
NVD5867NL/D
1 page  
NVD5867NL
TYPICAL PERFORMANCE CURVES
10
D = 0.5
1.0 0.2
0.1
0.05
0.02
0.1 0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
t, PULSE TIME (s)
0.001
Figure 13. Thermal Response
0.01
0.1
ORDERING INFORMATION
Order Number
Package
Shipping†
NVD5867NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVD5867NL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NVD5867NL | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |