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Número de pieza | NVB6411AN | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NVB6411AN (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! NTB6411AN, NTP6411AN,
NVB6411AN
N-Channel Power MOSFET
100 V, 77 A, 14 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
RqJC
Steady TC = 25°C
State
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Range
VDSS
VGS
ID
PD
IDM
TJ, Tstg
100
$20
77
54
217
285
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
56 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS
EAS
TL
77
470
260
Unit
V
V
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.69 °C/W
Junction−to−Ambient (Note 1)
RqJA
33
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 2
1
http://onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
14 mW @ 10 V
ID MAX
(Note 1)
77 A
N−Channel
D
G
S
4
12
3
TO−220AB
CASE 221A
STYLE 5
4
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Drain
NTP
6411ANG
AYWW
1
Gate
3
Source
NTB
6411ANG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
6411AN = Specific Device Code
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB6411AN/D
1 page NTB6411AN, NTP6411AN, NVB6411AN
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
Figure 13. Thermal Response
0.01
0.1
1
ORDERING INFORMATION
Device
NTB6411ANG
Package
D2PAK
(Pb−Free)
Shipping†
50 Units / Rail
NTB6411ANT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NTP6411ANG
TO−220
(Pb−Free)
50 Units / Rail
NVB6411ANT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NVB6411AN.PDF ] |
Número de pieza | Descripción | Fabricantes |
NVB6411AN | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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