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ATP304 fiches techniques PDF

ON Semiconductor - P-Channel Power MOSFET

Numéro de référence ATP304
Description P-Channel Power MOSFET
Fabricant ON Semiconductor 
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ATP304 fiche technique
Ordering number : ENA2192
ATP304
P-Channel Power MOSFET
-60V, -100A, 6.5m, ATPAK
http://onsemi.com
Features
On-resistance RDS(on)1=5.0m(typ.)
Input Capacitance Ciss=13000pF(typ.)
4.5V drive
Halogen Free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
ID
IDP PW10μs, duty cycle1%
PD Tc=25°C
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note : *1 VDD=-36V, L=100μH, IAV=-75A
*2 L100μH, Single pulse
Ratings
-60
±20
-100
-400
90
150
- 55 to +150
656
-75
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP304-TL-H
Ordering & Package Information
Device
ATP304-TL-H
Package
ATPAK
Shipping
3,000
pcs. / reel
note
Pb-Free
and
Halogen-Free
6.5
1.5
Packing Type: TL
Marking
4.6
2.6
0.4 0.4
4
ATP304
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
Semiconductor Components Industries, LLC, 2013
June, 2013
1: Gate
2: Drain
3: Source
4: Drain
ATPAK
Electrical Connection
2,4
1
3
60513 TKIM TC-00002952 No.A2192-1/6

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