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NGB8207ABNT4G fiches techniques PDF

ON Semiconductor - Ignition IGBT

Numéro de référence NGB8207ABNT4G
Description Ignition IGBT
Fabricant ON Semiconductor 
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NGB8207ABNT4G fiche technique
NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy 500 mJ
Gate Resistor (RG) = 70 W
This is a PbFree Device
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
VCES
VGE
IC
365
$15
20
50
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t 2 ms, f 100 Hz)
ESD (ChargedDevice Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
TDoetraaltPeoawbeorveDi2s5s°ipCat(iNonot@e 1T) C = 25°C
PD
165 W
1.1 W/°C
Operating & Storage Temperature Range
TJ, Tstg
55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink CasetoAmbient
© Semiconductor Components Industries, LLC, 2011
December, 2011 Rev. 1
1
http://onsemi.com
20 AMPS, 365 VOLTS
VCE(on) = 1.75 V
Typ @ IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
1 STYLE 4
MARKING DIAGRAM
4
Collector
NGB
8207AxG
AYWW
13
Gate
2
Emitter
Collector
NGB8207Ax = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NGB8207ANT4G
NGB8207ABNT4G
D2PAK
(PbFree)
D2PAK
(PbFree)
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8207AN/D

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