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PDF PH1225AL Data sheet ( Hoja de datos )
| Número de pieza | PH1225AL | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PH1225AL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Rev. 01 — 14 October 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for
computing use only
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
For computing use only
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 25 V;
RGS = 50 Ω; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 12 V;
see Figure 12 and 13
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 11
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 10
[1] Continuous current is limited by package.
[1]
Min Typ Max Unit
- - 25 V
- - 100 A
- - 121 W
-55 -
150 °C
- - 677 mJ
- 11.9 - nC
- 50.6 - nC
- - 1.6 mΩ
- 0.9 1.2 mΩ
1 page  
NXP Semiconductors
PH1225AL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
RG gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGS(th)
QGS(th-pl)
QGD
VGS(pl)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 8 and 9
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
VDS = 25 V; VGS = 0 V; Tj = 25 °C
VDS = 25 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
see Figure 10
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 150 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 10
ID = 25 A; VDS = 12 V; VGS = 10 V;
see Figure 12 and 13
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
see Figure 12 and 13
VDS = 12 V; see Figure 12
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 5.6 Ω
PH1225AL_1
Product data sheet
Rev. 01 — 14 October 2009
Min Typ Max Unit
25 - - V
22 - - V
1.3 1.7 2.15 V
0.65 - - V
- - 2.45 V
- - 1.5 µA
- - 500 µA
- - 100 nA
- - 100 nA
- 1.2 1.85 mΩ
- - 1.6 mΩ
- - 2.1 mΩ
- 0.9 1.2 mΩ
- 0.94 - Ω
- 105 - nC
- 50.6 - nC
- 19.3 - nC
- 8.1 - nC
- 4.5 - nC
- 11.9 - nC
- 2.6 - V
- 6380 - pF
- 1640 - pF
- 644 - pF
- 69 - ns
- 125 - ns
- 94 - ns
- 56 - ns
© NXP B.V. 2009. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PH1225AL
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
9. Legal information
9.1 Data sheet status
Document status [1][2]
Objective [short] data sheet
Preliminary [short] data sheet
Product [short] data sheet
Product status[3]
Development
Qualification
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PH1225AL_1
Product data sheet
Rev. 01 — 14 October 2009
© NXP B.V. 2009. All rights reserved.
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