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Numéro de référence | PH1330AL | ||
Description | N-channel MOSFET | ||
Fabricant | NXP Semiconductors | ||
Logo | |||
1 Page
PH1330AL
N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK
Rev. 01 — 14 October 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is
designed for computing customers only
1.2 Features and benefits
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power convertors
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
For computing customers only
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ≤ 30 V;
RGS = 50 Ω; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 25 A;
VDS = 12 V;
see Figure 13 and 14
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 17
[1] Continuous current is limited by package.
[1]
Min Typ Max Unit
- - 30 V
- - 100 A
- - 121 W
-55 -
150 °C
- - 383 mJ
- 9.3 - nC
- 46.6 - nC
- - 1.8 mΩ
- 1.04 1.3 mΩ
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Pages | Pages 13 | ||
Télécharger | [ PH1330AL ] |
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