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PDF KGT40N60KDA Data sheet ( Hoja de datos )
| Número de pieza | KGT40N60KDA | |
| Descripción | NPT Trench IGBT | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KGT40N60KDA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
High speed switching
High system efficiency
Short Circuit Withstand Times 10us
Extremely enhanced avalanche capability
AB
O SK
D
E
F
PP
123
DIM MILLIMETERS
A 15.90 +_ 0.30
B 5.00 +_ 0.20
C 20.85 +_ 0.30
D 3.00 +_ 0.20
E 2.00 +_ 0.20
F 1.20 +_ 0.20
MG
H
I
Max. 4.50
20.10 +_ 0.70
0.60 +_ 0.02
I J 14.70 +_ 0.20
K 2.00 +_ 0.10
M 2.40 +_ 0.20
O 3.60 +_ 0.30
P 5.45 +_ 0.30
Q 3.60 +_ 0.20
R 7.19 +_ 0.10
1. GATE
2. COLLECTOR
3. EMITTER
S
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
VGES
600 V
20 V
Collector Current
@Tc=25
@Tc=100
80 A
IC
40 A
Pulsed Collector Current
Diode Continuous Forward Current @Tc=100
Diode Maximum Forward Current
ICM* 120 A
IF 40 A
IFM 80 A
Maximum Power Dissipation
@Tc=25
@Tc=100
290 W
PD
116 W
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
Rt h JC
Rt h JC
Rt h JA
MAX.
0.43
1.45
40
UNIT
/W
/W
/W
TO-247
C
G
E
E
C
G
2011. 8. 30
Revision No : 0
1/7
1 page  
KGT40N60KDA
Fig 7. Turn-On Characteristics vs. Gate Resistance
1000
100
10
0
tr
td(on)
Common Emitter
VCC = 300V, VGE = 15V
IC = 40A
TC = 25 C
TC = 125 C
10 20 30 40 50 60
Gate Resistance RG (Ω)
Fig 9. Switching Loss vs. Gate Resistance
10
E(on)
1
E(off)
Common Emitter
VCC = 300V, VGE = 15V
IC = 40A
TC = 25 C
0.1 TC = 125 C
0 10 20 30 40 50 60
Gate Resistance RG (Ω)
Fig 11. Turn-Off Characteristics vs. Collector Current
1000
100
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25 C
TC = 125 C
td(off)
tf
10
5 10 20 30 40 50 60
Collector Current IC (Α)
2011. 8. 30
Revision No : 0
Fig 8. Turn-Off Characteristics vs. Gate Resistance
1000
td(off)
100
tf Common Emitter
VCC = 300V, VGE = 15V
IC = 40A
TC = 25 C
TC = 125 C
10
0 10 20 30 40 50 60
Gate Resistance RG (Ω)
Fig 10. Turn-On Characteristics vs. Collector Current
100
td(on)
tr Common Emitter
VGE = 15V, RG = 10Ω
TC = 25 C
TC = 125 C
10
0 10 20 30 40 50 60
Collector Current IC (Α)
Fig 12. Switching Loss vs. Collector Current
10
E(on)
1
Common Emitter
E(off)
0.1
VGE = 15V, RG = 10Ω
TC = 25 C
TC = 125 C
0 10 20 30 40 50 60
Collector Current IC (Α)
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KGT40N60KDA.PDF ] | |
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