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015AZ3.3 fiches techniques PDF

Toshiba Semiconductor - Silicon Epitaxial Planar Type Diode

Numéro de référence 015AZ3.3
Description Silicon Epitaxial Planar Type Diode
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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015AZ3.3 fiche technique
015AZ2.0~015AZ12
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ12
Constant Voltage Regulation Applications
Unit: mm
l Small package
l Nominal voltage tolerance about ±2.5%
(2.0V~12V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Power dissipation
P* 150
Junction temperature
Tj 125
Storage temperature range
Tstg -55~125
* Mounted on a glass epoxy circuit board of 20 × 20mm,
Pad dimension of 4 × 4mm.
Unit
mW
°C
°C
Electrical Characteristics
(See Page 2~3)
JEDEC
JEITA
TOSHIBA
Weight: 1.4 mg
1-1G1A
Marking
Example 1: 015AZ12-×
Example 2: 015AZ12-×
Pin Assignment (top view)
1 2001-10-30

PagesPages 6
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