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Toshiba - SILICON DIFFUSED JUNCTION TYPE ZENER DIODE

Numéro de référence 1Z11
Description SILICON DIFFUSED JUNCTION TYPE ZENER DIODE
Fabricant Toshiba 
Logo Toshiba 





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1Z11 fiche technique
1Z6.2~1Z390,1Z6.8A~1Z30A
TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE
1Z6.2~1Z390,1Z6.8A~1Z30A
CONSTANT VOLTAGE REGULATION
TRANSIENT SUPPRESSORS
Unit: mm
l Average Power Dissipation
: P = 1W
l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs
l Zener Voltage
: VZ = 6.2 ~ 390V
l Tolerance of Zener Voltage
1Z6.2 Series : ±10%
1Z6.8A Series : ±5%
l Plastic Mold Package
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
Tj
Tstg
RATING
1
40~150
40~150
UNIT
W
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.42g
DO15
SC39
33B1A
MARK
1 2001-06-13

PagesPages 5
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