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Numéro de référence | 1Z75 | ||
Description | SILICON DIFFUSED JUNCTION TYPE ZENER DIODE | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
1Z6.2~1Z390,1Z6.8A~1Z30A
TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE
1Z6.2~1Z390,1Z6.8A~1Z30A
CONSTANT VOLTAGE REGULATION
TRANSIENT SUPPRESSORS
Unit: mm
l Average Power Dissipation
: P = 1W
l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs
l Zener Voltage
: VZ = 6.2 ~ 390V
l Tolerance of Zener Voltage
1Z6.2 Series : ±10%
1Z6.8A Series : ±5%
l Plastic Mold Package
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
P
Tj
Tstg
RATING
1
−40~150
−40~150
UNIT
W
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.42g
DO−15
SC−39
3−3B1A
MARK
1 2001-06-13
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Pages | Pages 5 | ||
Télécharger | [ 1Z75 ] |
No | Description détaillée | Fabricant |
1Z7.5 | DIODE(CONSTANTVOLTAGEREGULATION) | ToshibaSemiconductor |
1Z7.5 | SILICON DIFFUSED JUNCTION TYPE ZENER DIODE | Toshiba |
1Z7.5A | DIODE(CONSTANTVOLTAGEREGULATION) | ToshibaSemiconductor |
1Z7.5A | SILICON DIFFUSED JUNCTION TYPE ZENER DIODE | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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