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PDF WNM2306 Data sheet ( Hoja de datos )
| Número de pieza | WNM2306 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM2306
N-Channel, 20V, 3.2A, Power MOSFET
WNM2306
Http://www.willsemi.com
V(BR)DSS
20
Rds(on)
(Max. m)
45 @ 4.5V
55 @ 2.5V
66 @ 1.8V
Descriptions
The WNM2306 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench technology
and design to provide excellent RDS (ON) with low gate
charge. This device is suitable for use in DC-DC
conversion and power switch applications. Standard
Product WNM2306 is Pb-free.
Features
SOT-23
D
3
12
GS
Configuration (Top View)
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
WT6*
WT6
*
= Device Code
= Month (A~Z)
Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
Order Information
Device
Package
WNM2306-3/TR SOT-23
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Dec,2011 - Rev.2.3
1 page  
1000
800
V =0V
GS
F=1MHz
600
400
Ciss
Coss
200 Crss
0
0 2 4 6 8 10
V Drain-to-Source Voltage (V)
DS
Capacitance
WNM2306
2.0
1.5
1.0
0.5
0.0
0.3 0.4 0.5 0.6 0.7 0.8
V -source-to-Drain Voltage(V)
SD
Source to Drain Diode Forward Voltage
10
8
6
4
2
TA = 25 °C
0
0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power
10
Limited by RDS(on)*
100 μs
1 ms
1
10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
100 s, DC
0.01
0.1
BVDSS Limited
1 10
VDS - Drain-to-Source Voltage (V)
Safe Operating Area
100
1
Duty Cycle = 0.5
1
0.05.2 D = 0.5
0.2 0.2
0.10.1
0.1
0.10.05
0.020.05
0.05
0.02
0.01
0.01
0.0005.02
Single Pulse
0.002
0.001
0.0001
0.01
10-4
Single0.P00u1lse
10-3
0.01
10-2
R θJA (t) = r(t) * RθJA
NotResθ:JA = 270 °C/W
P(pk)PDM
0.1 1
t1 , TIME (sec)
10-1
1
Square Wave Pulse Duration (s)
t1 t 2t1
12T..DJDPu-eutTyrtyAUCCny=cyitPlceBle,a*t,D2sRDe=θ==Jt1AR/(tt2th)ttJ12A = 70 °C/W
10 3. TJM - TA = PDM1Z0th0JA(t) 300
4. Surface Mounted
10 100 1000
Transient Thermal Response
Will Semiconductor Ltd. 5 Dec,2011 - Rev.2.3
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNM2306.PDF ] | |
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