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PDF HUF76633P3_F085 Data sheet ( Hoja de datos )
| Número de pieza | HUF76633P3_F085 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
HUF76633P3_F085
April 2012
38A, 100V, 0.036 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Symbol
DRAIN
(FLANGE)
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.035Ω, VGS = 10V
- rDS(ON) = 0.036Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.Fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
• Qualified to AEC Q101
• RoHS Compliant
Ordering Information
PART NUMBER
HUF76633P3_F085
PACKAGE
TO-220AB
BRAND
76633P
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Ratings
Units
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TC=
(TC=
(TC=
(TC=
1122005500ooCCooCC,, VV,, VVGGGGSSSS====15V450.VV)5))V.()F.. (i..gF..uig..rue.. r..e2..)2.. )...
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±16
38
39
27
27
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC.
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . Tpkg
NOTES:
1. TJ = 25oC to 150oC.
145
0.97
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2012 Fairchild Semiconductor Corporation
HUF76633P3_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
HUF76633P3_F085
Typical Performance Curves (Continued)
1.2
VGS = VDS, ID = 250µA
1.0
0.8
0.6
1.2
ID = 250µA
1.1
1.0
0.4
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
5000
1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
CRSS = CGD
100
VGS = 0V, f = 1MHz
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0.9
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10
VDD = 50V
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
2 ID = 39A
ID = 27A
ID = 15A
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
400
VGS = 4.5V, VDD = 50V, ID = 27A
300
tr
200
td(OFF)
tf
100
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
500
VGS = 10V, VDD = 50V, ID = 39A
400
td(OFF)
300
tf
200
tr
100
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
HUF76633P3_F085 Rev. C1
5
www.fairchildsemi.com
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