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IRL7833PbF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRL7833PbF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRL7833PbF fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
l Lead-Free
PD - 95270
IRL7833PbF
IRL7833SPbF
IRL7833LPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 3.8m
32nC
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL7833
D2Pak
IRL7833S
TO-262
IRL7833L
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
hCase-to-Sink, Flat, Greased Surface
hJunction-to-Ambient
Junction-to-Ambient (PCB Mount)
Notes  through † are on page 12
www.irf.com
Max.
30
± 20
150f
110f
600
140
72
0.96
-55 to + 175
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
05/18/04

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