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Numéro de référence | CEB16N10L | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP16N10L/CEB16N10L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V.
RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
100
±20
15.2
60
60
0.48
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.5
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2010.Jan.
http://www.cet-mos.com
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Pages | Pages 4 | ||
Télécharger | [ CEB16N10L ] |
No | Description détaillée | Fabricant |
CEB16N10 | N-Channel Enhancement Mode Field Effect Transistor | CET |
CEB16N10L | N-Channel Enhancement Mode Field Effect Transistor | CET |
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