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Número de pieza | ATP214 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ATP214 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Ordering number : ENA1712A
ATP214
N-Channel Power MOSFET
60V, 75A, 8.1mΩ, Single ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)1=6.2mΩ(typ.)
• 4V drive
• Protection diode in
• Input Capacitance Ciss=4850pF(typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
EAS
IAV
Note :*1 VDD=15V, L=100μH, IAV=38A
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
60
±20
75
225
60
150
--55 to +150
94
38
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP214-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP214
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/70710PA TKIM TC-00002343 No. A1712-1/7
1 page Taping Specification
ATP214-TL-H
ATP214
No. A1712-5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet ATP214.PDF ] |
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