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CEB1195 fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEB1195
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEB1195 fiche technique
CEP1195/CEB1195
CEF1195
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP1195
CEB1195
CEF1195
VDSS
900V
RDS(ON)
2.75Ω
ID
5A
@VGS
10V
900V 2.75Ω
5A
10V
900V 2.75Ω 5A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energyh
Single Pulsed Avalanche Current h
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
TO-220F
VDS
VGS
ID
IDM e
900
±30
5
20
5d
20d
166 50
PD 1.3 0.4
EAS 22.5
IAS 3
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
.
Details are subject to change without notice .
1
Rev 4. 2015.June
http://www.cet-mos.com

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