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PDF AON6912 Data sheet ( Hoja de datos )
| Número de pieza | AON6912 | |
| Descripción | 30V Dual Asymmetric N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AON6912
30V Dual Asymmetric N-Channel MOSFET
General Description
Product Summary
The AON6912 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN5x6A package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
RDS(ON) to reduce conduction losses. The AON6912 is well
suited for use in compact DC/DC converter applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
34A
<13.7mΩ
<19.3mΩ
Q2
30V
52A
<7.3mΩ
<10.4mΩ
PIN1
Power DFN5x6A
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20
34 52
21 33
85 130
10 13.8
8 10.8
22 28
24 80
22 30
9 12
1.9 2.1
1.2 1.3
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
29
56
4.5
Typ Q2
24
50
3.5
Max Q1
35
67
5.5
Max Q2
29
60
4.2
Units
°C/W
°C/W
°C/W
Rev1: Mar. 2011
www.aosmd.com
Page 1 of 10
1 page  
AON6912
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 25
TA=25°C
TA=150°C
TA=100°C
TA=125°C
20
15
10
5
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
10000
1000
100
10
TA=25°C
17
5
2
10
1
0.00001 0.001
0.1
10 0 1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=67°C/W
40
0.1
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev1: Mar. 2011
www.aosmd.com
Page 5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AON6912.PDF ] | |
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