|
|
Numéro de référence | CEM3501L | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEM3501L
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -5A, RDS(ON) = 65mΩ @VGS = -10V.
RDS(ON) = 75mΩ @VGS = -4.5V.
RDS(ON) = 100mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID -5
IDM -20
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now
Specification and data are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com
|
|||
Pages | Pages 4 | ||
Télécharger | [ CEM3501L ] |
No | Description détaillée | Fabricant |
CEM3501L | P-Channel Enhancement Mode Field Effect Transistor | CET |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |