DataSheetWiki


CED4301 fiches techniques PDF

CET - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CED4301
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





1 Page

No Preview Available !





CED4301 fiche technique
CED4301/CEU4301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -20A, RDS(ON) = 42m@VGS = -10V.
RDS(ON) = 65m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-40
±20
-20
-80
31
0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2010.Feb
http://www.cet-mos.com

PagesPages 4
Télécharger [ CED4301 ]


Fiche technique recommandé

No Description détaillée Fabricant
CED4301 P-Channel Enhancement Mode Field Effect Transistor CET
CET

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche