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CEH8205 fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEH8205
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEH8205 fiche technique
CEH8205
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) TYP = 25 m@VGS = 4.5V.
RDS(ON) TYP = 30m@VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
Halogen free.
4
5
6
3
2
1
TSOP-6
G1(6)
D1(2)
G2(4)
S1(1)
D2(5)
S2(3)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 5.2
IDM 20
Maximum Power Dissipation
PD 1.14
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
110
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2010.MAY
http://www.cet-mos.com

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