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Silan Microelectronics - 650V N-CHANNEL MOSFET

Numéro de référence SVF10N65F
Description 650V N-CHANNEL MOSFET
Fabricant Silan Microelectronics 
Logo Silan Microelectronics 





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SVF10N65F fiche technique
SVF10N65T/F_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N65T/F is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
10A,650V,RDS(on)(typ.)=0.80Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF10N65T
SVF10N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVF10N65T
SVF10N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
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